Spectra Analysis of a Novel Ti-Doped LiAlO2 Single Crystal

LiAlO2 single crvstals doped with Ti at concentration 0.2at.% are grown by the Czochralskl technique with dimensions φ42×55mm. Ti ions in the crystal are quadrivalence proven by comparing the absorption and fluorescence spectra of pure LiAlO2 and Ti： LiAlO2. After air and Li-rich atmosphere annealing, the absorption peaks in the range of 600-800nm disappear. We conclude that 682 and 756nm absorption peaks are attributed to the VLi and Vo absorptions, respectively： The peaks at 716nm and 798nm may stem from the VLi^＋ and absorptions. The colour-centre model can be applied to explain the experimental phenomena. Ti^4＋-doping produces more lithium vacancies in the LiAlO2 crystal. The intensities of [LiO4] and the associated bonds remain unchanged, which improves the anti-hydrolyzation and thermal stability of LiAlO2 crystals.     

}MSo浸种对大麦种子萌发及若干性状的影响

本文报道二甲亚矾(DMSO)浸种影响大麦“早熟3号”种子的萌发以及浸种后种子的渗漏和呼吸强度等的变化.结果表明:在24℃条件干浸种，。.1%和5芳的DMSO明显促进种子的萌发，5劣DMSO浸种的促进作用尤为明显.然而这种影响效应在zs c条件下浸种则完全相反，对种子萌发有抑制作用，表现明显的温度效应.     

POSITIVE SOLUTIONS FOR NONHOMOGENEOUS ELLIPTIC EQUATIONSWITH CRITICAL GROWTH ON R~(2)

1IntroductionIntillspaper,weare(follccrlledwitlltileexistellccofPositly(tsollltiollsoftilefollowillgnonhonlogelleousellipticProblclll:whereg(x)EL'(R'),g(:v)Z0alldg(x)t0,f(x,t)=h(x,t).hi=withb>0,h(x,t)EC(R=xR,R)alldtilefollowing(CI)-(C3)11old:(CI)sliphillM0.linljfl- x,h(T,t)(t--if-=011llif'orllllyforxeR2.hill}t:l-:,t)(axle(~ltJ')= lx,11lliforllllyl'Ora:6RZ.ltl~la(C3)ThereexistM>0,aE(0,1]sucllthatFOllowing[1,5],wesaythatf(x,t)=h(x,f…     

Vibrational spectrum of uridine obtained by means of nonresonant-background-free CARS spectroscopy

Received: 18 June 1996/Revised version: 3 January 1997     

A Modified SQP Method and Its Global Convergence

The sequential quadratic programming method developed by Wilson, Han andPowell may fail if the quadratic programming subproblems become infeasibleor if the associated sequence of search directions is unbounded. In [1], Hanand Burke give a modification to this method wherein the QP subproblem isaltered in a way which guarantees that the associated constraint region isnonempty and for which a robust convergence theory is established. In thispaper, we give a modification to the QP subproblem and provide a modifiedSQP method. Under some conditions, we prove that the algorithm eitherterminates at a Kuhn–Tucker point within finite steps or generates aninfinite sequence whose every cluster is a Kuhn–Tucker point.Finally, we give some numerical examples.     

激光除锈过程的实时监测技术研究

对激光除锈过程中的实时监测技术进行了实验研究,结果表明:除锈过程中产生的声波强度会随着表面清洁度的变化而发生明显的变化,声波信号包含了除锈过程中的大量信息,可作为激光除锈实时监测的基本信号.     

张 ■教授与我国的植物科学

张（１８８４—１９５０），植物学家和生物学教育家．中国近代植物学的先驱、现代实验性植物生理学和植物生态学的奠基人．最先自编我国第一套植物学、植物形态学、植物解剖学、种子植物分类学、植物生态学和植物生理学教科书．长期从事植物学科的教学和研究工作，为我国的生物科学和教育事业的建立和发展，贡献了自己的一切知识和力量．     

The star chromatic number of a graph

We study a generalization of the notion of the chromatic number of a graph in which the colors assigned to adjacent vertices are required to be, in a certain sense, far apart. © 1993 John Wiley & Sons, Inc.     

Interfacial structure and electrical properties of LaAlO3 gate dielectric films on Si by metalorganic chemical vapor deposition

LaAlO₃ (LAO) gate dielectric films were deposited on Si substrates by low-pressure metalorganic chemical vapor deposition. The interfacial structure and composition distribution were investigated by high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectroscopy (SIMS), and Auger-electron spectroscopy (AES). HRTEM confirms that there exists an interfacial layer between LAO and Si in most samples. AES, SIMS, and XPS analyses indicate that the interfacial layer is compositionally graded La–Al silicate and the Al element is severely deficient close to the Si surface. Electrical properties of LAO films were evaluated. No evident difference in electrical properties between samples with and without native SiO₂ layers was observed. The electrical properties are discussed in terms of LAO growth mechanisms, in relation to the interfacial structure. PACS 73.40.Qv; 81.15.Gh; 77.55.+f; 68.35.-p